Semiconductor laser
文献类型：专利
| 作者 | KURODA KENICHI; HISAMA KAZUO; KOJIMA KEISUKE |
| 发表日期 | 1985-11-25 |
| 专利号 | JP1985236275A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize a lateral mode with simple manufacturing process by forming a piezoelectric film on a semiconductor laser, forming a pectinated electrode on the film, thereby exciting surface acoustic wave in a light propagating direction. CONSTITUTION:A ZnO piezoelectric film 9 is formed on an upper electrode 6 and a pectinated electrode (IDT) 10 for exciting surface acoustic wave to propagate in a light propagating direction is formed. When an electric field is applied from the upper electrode 6 and a current is implanted to P-AlxGa1-xAs layer 3, electrons are excited in the active region, recombined with holes to emit a light. Elastic surface wave is excited by an IDT10 and when the surface wave is propagated in the light propagating direction, light is Bragg diffracted in the active region, and oscillated in a DFB mode. A laser oscillating region width can be controlled in response to the electrode crossing width of the IDT 10 to stabilize the lateral mode. |
| 公开日期 | 1985-11-25 |
| 申请日期 | 1984-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KURODA KENICHI,HISAMA KAZUO,KOJIMA KEISUKE. Semiconductor laser. JP1985236275A. 1985-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。