Semiconductor laser
文献类型：专利
| 作者 | OTOSHI SO; YAMAGUCHI KEN; KANAI SANEYO; UDA TAKESHI; MURAYAMA YOSHIMASA; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1987-03-19 |
| 专利号 | JP1987062577A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a low threshold value and high efficiency lateral mode control semiconductor laser by providing a current narrowing layer having a wide forbidden band width of the same degree as a clad layer to hold a photoabsorbing layer to prevent carrier from invading from the clad layer to the current narrowing layer (photoabsorbing layer). CONSTITUTION:An N-type Ga0.55Al0.45As clad layer 2, an undoped Ga0.86Al0.14As active layer 3, a P-type Ga0.55Al0.45As clad layer 4, an N-type Ga0.55Al0.45As current narrowing layer 5, an N-type GaAs photoabsorbing layer 4, an N-type Ga0.55Al0.45As current narrowing layer 7 are sequentially grown by an MOCVD method on an N-type GaAs substrate Then, a groove 10 is formed by etching until the layer 4 is exposed. Thereafter, a P-type Ga0.55Al0.45As buried layer 8 and a P-type GaAs cap layer 9 are grown by using again the MOCVD method. An N-type electrode 11 and a P-type electrode 12 are eventually provided by a depositing method. Thus, a threshold current is reduced to improve the efficiency. |
| 公开日期 | 1987-03-19 |
| 申请日期 | 1985-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80592]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OTOSHI SO,YAMAGUCHI KEN,KANAI SANEYO,et al. Semiconductor laser. JP1987062577A. 1987-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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