Semiconductor laser device
文献类型：专利
| 作者 | HATTORI AKIRA; YAMASHITA KOJI |
| 发表日期 | 1988-10-27 |
| 专利号 | JP1988260093A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve breakdown strength characteristic against the damage at a resonator end face by providing a thin metal film on the end faces of the resonator. CONSTITUTION:An N-type clad layer 2 formed to hold an active layer 1, a P-type clad layer 3, an N-type contact layer 4 formed on the layer 2, a P-type contact layer 5 formed on the layer 3, contact electrodes 6, 7 formed on the layers 4, 5, a thin metal film 8 formed by depositing metal to the front end face Ff of a resonator, and a reflecting film 9 made of a dielectric substance formed on the rear end face Fr of the resonator are provided. The film 8 is formed on the end face of the resonator to form a depletion layer near a Schottky junction to reduce the recombination of carrier in the depletion layer, thereby reducing an optical density at the end face of the resonator and improving breakdown strength characteristic against the damage of the end face of the resonator. |
| 公开日期 | 1988-10-27 |
| 申请日期 | 1987-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80599]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA,YAMASHITA KOJI. Semiconductor laser device. JP1988260093A. 1988-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。