Manufacture of optoelectronic integrated circuit
文献类型：专利
| 作者 | OISHI TOSHIYUKI; ABE YUJI; SUGIMOTO HIROSHI; OTSUKA KENICHI; MATSUI TERUHITO |
| 发表日期 | 1990-06-01 |
| 专利号 | JP1990143562A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optoelectronic integrated circuit |
| 英文摘要 | PURPOSE:To execute the epitaxial growth of a transistor and a laser at the same time to decrease crystal growth processes and processes performed at a high temperature in number so as to improve an integrated circuit of this design in reliability by a method wherein an impurity diffusion is performed onto the emitter layer of the transistor to make its conductivity type inverted for the formation of the laser, and the above impurity diffusion is performed in the same process that an impurity diffusion executed for the formation of the external base of the transistor. CONSTITUTION:An n-InGaAsP contact layer 2, an n-InP layer 15, a p-InGaAsP layer 16, an n-InP layer 15, and an n-InGaAsP contact layer 2 are epitaxially grown in this sequence on a semi-insulating InP substrate A photoengraving and an etching process are repeated two times for the formation of the emitter mesa of a transistor and the removal of the contact layer 2 of the mesa of a laser. Then, zinc is diffused into the external base of the transistor and the mesa of the laser using a silicon nitride film. A photoengraving and an etching process are repeated two times for the formation of the mesa of the base and the collector of the transistor and the mesa of the laser and for the isolation of the elements. Then, layers 6, 15, and 6 are selectively and epitaxially formed in this sequence. A protective film 12 end an electrode 13 are formed, the electrode is alloyed, and thus the formation of an integrated circuit is completed. |
| 公开日期 | 1990-06-01 |
| 申请日期 | 1988-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80601]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OISHI TOSHIYUKI,ABE YUJI,SUGIMOTO HIROSHI,et al. Manufacture of optoelectronic integrated circuit. JP1990143562A. 1990-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。