Optical integrated circuit device
文献类型：专利
| 作者 | MIURA SHUICHI |
| 发表日期 | 1986-08-21 |
| 专利号 | JP1986187363A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit device |
| 英文摘要 | PURPOSE:To settle the crystal growth by once and to improve productivity and yield, by a method wherein a optical semiconductor element which is a PIN photo-diode and an electron element which is a J-FET are formed in a multi-layer semiconductor crystal having a hetero junction using this hetero junction. CONSTITUTION:A P type area 22 is formed on a PIN diode forming area on a semi-insulating GaAs substrate 21 by diffusion of Zn and the like, and a P type GaAs layer 23, an N-type Al0.3Ga0.7As layer 24 and an N-type GaAs layer 25 are stacked by laminating on the whole surface containing said P type area 22 by molecular beam epitaxial growth method or the like. Next, mesas are formed to each area of a diode which is light receiving element and a J-FET adjoining to this, and the inter-element separation is performed, and the layer 25 of a diode light receiving part is removed, and an Au/Au/Zn/Au layer 26 which becomes a P-type area of the diode is cladded. After that, patterning is performed by cladding an Au/AuGe layer 27 on the whole surface, and an N-type area is formed on the diode, and a source area 27S and a drain area 27D are formed on the FET respectively. |
| 公开日期 | 1986-08-21 |
| 申请日期 | 1985-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80605]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI. Optical integrated circuit device. JP1986187363A. 1986-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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