Optical semiconductor device
文献类型：专利
| 作者 | UCHIDA MAMORU |
| 发表日期 | 1991-07-26 |
| 专利号 | JP1991173489A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To obtain an optical semiconductor device having large continuous wavelength variable width by forming each region of a gain region section and a wavelength control section in quantum well structure, independently injecting carriers into each region and varying an oscillation wavelength. CONSTITUTION:An n-type clad layer 12, an ADQW active layer 13 and a p-type optical guide layer 14 are laminated onto a GaAs substrate 1 A GRIN-SCH layer 31, a quantum well layer 32, an intermediate barrier layer 34 and a GRIN- SCH layer 35 are shaped from the (n) side in the ADQW active layer 13. A grating 21 is formed onto the optical guide layer 14 only in a Bragg wavelength control region. A p-type clad layer 15 and a p-type cap layer 16 are laminated again. A mesa stripe is shaped up to the clad layer 15, and an n-type buried layer 17 is formed. (p) electrodes 18 and an (n) electrode 19 are shaped, and a gain region, a phase control region and the Bragg wavelength control region are formed. The electrodes are isolated, the gain control region, the phase control region and the Bragg wavelength region are isolated completely by forming grooves 20, and a cleavage plane 22 is shaped. |
| 公开日期 | 1991-07-26 |
| 申请日期 | 1989-12-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80613]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | UCHIDA MAMORU. Optical semiconductor device. JP1991173489A. 1991-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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