Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | YAGI TETSUYA |
| 发表日期 | 1992-06-02 |
| 专利号 | JP1992159789A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To suppress the reactive current of a semiconductor laser device to nearly zero so as to improve the reliability of the device by forming an active layer having a disordered region near the side face sections of the active layer on the stripe-like projecting section of the first clad layer and the second clad layer of the second conductivity type on the active layer. CONSTITUTION:A p-Al0.15Ga0.85As active layer 3 having a quantum well structure is provided in the stripe-like projecting section 11 of the first clad layer 2, with the areas of the layer 3 near the side face section of the layer 3 being disordered to become mixed-crystal regions 12, and the second clad layer 4 is formed on the layer 3. When a bias voltage is applied across a p- and n- side electrodes 7 and 8 so that the electrode 7 side can become positive, an electric current does not flow to the region between both electrodes 7 and 8 where an SiO2 insulating film 6 exists, but selectively flows to the stripe-like projecting section 11 only. Even in the projecting section 11, the electric current does not flow to the disorder regions 12, since the diffusion potential at the p-n junction in the regions 12 near the side face sections of the layer 3 is higher than that in the non-disordered region. Therefore, the reliability of this semiconductor laser device can be improved, since the reactive current of the device can be suppressed to nearly zero. |
| 公开日期 | 1992-06-02 |
| 申请日期 | 1990-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80633]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA. Semiconductor laser device and manufacture thereof. JP1992159789A. 1992-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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