Semiconductor laser
文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010684A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize a fundamental transversal mode and to reduce a threshold value by a method wherein the constitutive element of a quantum well structure in an active layer in an oscillation region is made partly different from that in other regions. CONSTITUTION:An n-type AlGaAs clad layer 2, a quantum-well active layer 3, a p-type AlGaAs clad layer 4 and a p-type GaAs cap layer 5 are grown sequentially on an n-type GaAs substrate When the quantum well of the active layer 3 is grown, trimethylindium is used as a raw material which contains In, Ga or As. The growth temperature of only a stripe region 10 is set selectively at 700 deg.C or lower only when the active layer is grown, and the growth temperature in regions other than it is set at a high temperature of 750 to 800 deg.C. When the growth temperature is at 750 to 800 deg.C, In is disconnected from a substrate and is hardly taken in at an epitaxial growth operation. On the other hand, Al, Ga and As are taken into a growth layer at the temperature. Consequently, when the active layer 3 is grown at a temperature distribution, an InGaAs quantum well is formed only in the stripe region 10, and a GaAs quantum well is formed in a region adjacent to the region 10. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80637]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. Semiconductor laser. JP1992010684A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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