Semiconductor laser device
文献类型：专利
| 作者 | GOTO YUKIO |
| 发表日期 | 1988-03-01 |
| 专利号 | JP1988048888A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, which can implement a short wavelength and can perform high output operation, by growing crystal layers, whose band gaps are wider than an active layer and lattice constants are smaller than that of a substrate, from a substrate, around the active layer in the vicinity of the end surface of a resonator. CONSTITUTION:Etching is performed in the vicinity of the end surface of a resonator. Thus, a contact layer 7, a clad layer 6, an active layer 5, a clad layer 4, a current blocking layer 3 and a clad layer 2 are removed. Crystal layers 11 and 12 are sequentially grown thereon. The band gaps of the crystal layers 11 and 12 are larger than the active layer 5. The lattice constants are smaller than that of a substrate When a voltage is applied, a current does not flow in the current blocking layer 3 and in the vicinity of the end surface of the resonator. The current flows only in an opening part in the element. A part of the active layer 5 located thereon becomes an active region. In the vicinity of the end surface of the resonator, the active region is surrounded by the crystal, whose lattice constant is small. Therefore stress due to lattice strain is applied, and the band gap in the active region is expanded. Thus, light absorption in this region is decreased, and high output can be implemented. |
| 公开日期 | 1988-03-01 |
| 申请日期 | 1986-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80639]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | GOTO YUKIO. Semiconductor laser device. JP1988048888A. 1988-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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