Quantum cascade semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO, JUN-ICHI |
| 发表日期 | 2017-09-26 |
| 专利号 | US9774168 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum cascade semiconductor laser |
| 英文摘要 | A quantum cascade semiconductor laser includes a substrate with a main surface including a waveguide area and a distributed Bragg reflection area that are arranged in a direction of a first axis; a laser region provided on the waveguide area, the laser region including a mesa waveguide having first and second side surfaces, and first and second burying regions provided on the first and second side surfaces, respectively; a distributed Bragg reflection region provided on the distributed Bragg reflection area, the distributed Bragg reflection region including a semiconductor wall having first bulk semiconductor regions and first laminate regions that are alternately arrayed in a direction of a second axis intersecting the first axis; and an upper electrode provided on the laser region. Each first bulk semiconductor region includes a bulk semiconductor layer. Each first laminate region includes a stacked semiconductor layer having a plurality of semiconductor layers. |
| 公开日期 | 2017-09-26 |
| 申请日期 | 2016-04-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80643]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, JUN-ICHI. Quantum cascade semiconductor laser. US9774168. 2017-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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