Semiconductor light emitting device
文献类型：专利
| 作者 | KOTAKI YUJI |
| 发表日期 | 1988-10-04 |
| 专利号 | JP1988237589A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce a leakage current and improve a photocoupling efficiency by forming an active layer between a one conductivity type optical waveguide layer and an opposite conductivity type optical waveguide layer. CONSTITUTION:A 1st optical waveguide layer 3a which is formed on a substrate 4 and has the one conductivity type same as the conductivity type of the substrate 4, an active layer 5 which is formed on the optical waveguide layer 3a in an active region 1 and a 2nd optical waveguide layer 3b which is formed on the active layer 5 in an active region 4 and formed solidly on the 1st optical waveguide layer 3a in a resonance region 2 and has a conductivity type opposite to the conductivity type of the 1st optical waveguide layer 3a are provided and the active layer 5 is formed between the 1st and 2nd optical waveguide layers 3a and 3b. With this constitution, a light emitted from the active layer 5 in the active region 1 can be transmitted to the resonance region 2 with a high efficiency so that the optical waveguide with very little leakage current and a high photocoupling efficiency can be formed. |
| 公开日期 | 1988-10-04 |
| 申请日期 | 1987-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80659]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KOTAKI YUJI. Semiconductor light emitting device. JP1988237589A. 1988-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。