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文献类型：专利
| 作者 | YANO MORICHIKA; YAMAMOTO SABURO; HAYASHI HIROSHI; MATSUI KANEKI; TAKIGUCHI HARUHISA |
| 发表日期 | 1990-11-14 |
| 专利号 | JP1990052869B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To eliminate the Adverse effect of re-incident rays, to give relationship between injected currents and an optical output (excellent linearity) and to prevent the increase of noises by expanding the spectral width of a uniaxial mode. CONSTITUTION:The distribution of the complex of refraction is controlled by properly selecting the thickness (d) of an active layer 4, the thickness (t) of sections except a V-shaped groove in a P-clad layer 3 and each mixed crystal ratio of clad layers 3, 5 and the active layer 4 in a semiconductor laser element. A primary mode is diverged and absorbed to the outside of a striped region and disappears because it belongs to a radiation mode. When relaxation oscillations are executed resonantly between the generation and disappearance of the primary mode, the spectral width W2 of the spectral curve of laser oscillations is expanded. Accordingly, coherent length is shortened, noises resulting from return rays of a semiconductor laser are inhibited approximately, and a semiconductor device optimum as a light source for a video disk can be constituted. |
| 公开日期 | 1990-11-14 |
| 申请日期 | 1983-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YANO MORICHIKA,YAMAMOTO SABURO,HAYASHI HIROSHI,et al. -. JP1990052869B2. 1990-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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