Manufacture of semiconductor laser
文献类型：专利
| 作者 | SEKI TETSUYA |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078275A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve reproducibility and element properties by burying a light wave guide path with II-VI compound semiconductor, and etching the semiconductor by RIBE wherein specific reactive gas is used. CONSTITUTION:An n-GaAs buffer layer 2, an n-Al0.5Ga0.5As clad layer 3, an Al0.15Ga0.85As active layer 4, a p-Al0.5Ga0.5As clad layer 5, and a p-GaAs contact layer 6 are stacked in order on an n-GaAs substrate so as to form a substrate in DH structure. The surface of the substrate is etched to the middle of the layer 6, using the mask of resist 7 so as to form a rib. A ZnSe film 8 is grown to bury the rib. A resist mask 9 having an opening is formed, and the ZnSe film 8 on the rib is etched off by RIB wherein reactive gas consisting of the mixture gas of gas, which includes at least halogen, and inert gas is used. Next, a P-type electrode 10 and N-type electrode 11 are formed. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80667]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SEKI TETSUYA. Manufacture of semiconductor laser. JP1991078275A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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