Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | IMAI HAJIME |
| 发表日期 | 1989-09-12 |
| 专利号 | JP1989228188A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the generation of faults due to a heat damage by a method wherein a groove is formed on the surface of a compound substrate provided with a diffraction grating formed on its surface, and compound semiconductor layers broader than an active layer are successively laminated inside the groove and on the surface of the diffraction grating, and the active layer, a clad layer, and an electrode layer are laminated thereon. CONSTITUTION:A groove 1b is provided in the surface of an n-type InP substrate 1 provided with a diffraction grating 1a, and a p-type InGaAsP layer 2, a p-type InP layer 3, and an n-type InP layer 4 are successively laminated inside the groove 1b and on the surface of the diffraction grating 1a, and moreover an InGaAsP layer 5 to id an active layer, a p-type InP layer 6, and a p-type InGaAsP layer 7 are formed thereon in lamination. In this process, the depth of the groove 1b is so set as to enable the height of the active layer 5 which is to be formed in the groove 1b to be level with the position of the diffraction grating 1a, and the active layer 5 is made narrow in width so as to be decreased in an optical guiding property. By these processes, only being subjected to a heat treatment once, required layers can be formed, so that the generation of faults due to a heat damage can be prevented. |
| 公开日期 | 1989-09-12 |
| 申请日期 | 1988-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80669]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor light emitting device and manufacture thereof. JP1989228188A. 1989-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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