Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI; HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI |
| 发表日期 | 1987-11-21 |
| 专利号 | JP1987269386A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain with good reproducibility a cavity length and width as well as emission directions by forming resonator faces by means of cleaving after cutting a laser wafer in the direction of right angles to a cleaving direction. CONSTITUTION:Various layers; buffer layer 22, clad layer 23, active layer 24, clad layer 25, cap layer 26 are prepared in sequence according to a moleculur beam epitaxy system. After laminating a nitriding silicon film 27 according to a plasma CVD system, a portion of its film layer is removed to form patterns corresponding to a plurality of semiconductor laser devices, resulting in the formation of Cr-Au ohmic electrode and also in the formation of independent electrodes corresponding to stripes after separating them by etching. Then, after vapordepositing an Au-Ge electrode as the ohmic electrode 29 for N-type, ohmic contact is obtained by heat diffusion. After repeatedly cutting a wafer into numerous units, at first, along a line A-A' in each width of around 6 mm, they are cleaved along lines of a1 and a2 and are separated into each unit by cutting after forming resonance faces 16 and 17. |
| 公开日期 | 1987-11-21 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI,HARA TOSHITAMI,NOJIRI HIDEAKI,et al. Manufacture of semiconductor laser device. JP1987269386A. 1987-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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