Semiconductor laser and its manufacture
文献类型：专利
| 作者 | ONAKA SEIJI; OGURA MOTOTSUGU |
| 发表日期 | 1990-06-15 |
| 专利号 | JP1990156588A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To reduce astigmatism by a method wherein light is confined and guided also in the direction parallel to an active layer by forming, on both sides of a stripe, an insulating film whose reflectivity is smaller than an AlGaInP clad layer. CONSTITUTION:An N-type GaAs current blocking layer 107 on both sides of a stripe is etched, and a pair of trenches is formed on both sides of the stripe. In a pair of the trenches on both sides of the stripe, an insulating film, Si3N4 film 109, is selectively formed by using photoetching art. The reflectivity of the film 109 is smaller than that of a P-type AlGaInP clad layer 104 newly deposited after an Si3N4 film 108 used as a mask is eliminated. Since, in the above manner, the insulating film 109 whose reflectivity is made smaller than that of the AlGaInP clad layer 104 is formed on both sides of the stripe, light can be confined and guided also in the direction parallel to an active layer 103. Thereby, reflectivity wave guiding is enabled in the directions both parallel to and vertical to the active layer, so that the astigmatism can be reduced. |
| 公开日期 | 1990-06-15 |
| 申请日期 | 1988-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80678]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,OGURA MOTOTSUGU. Semiconductor laser and its manufacture. JP1990156588A. 1990-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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