Semiconductor laser
文献类型：专利
| 作者 | NISHIDA KATSUHIKO |
| 发表日期 | 1984-05-18 |
| 专利号 | JP1984086282A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which can oscillate in a short wavelength with a long lifetime by composing an active layer of the III-V Group compound semiconductor and composing a clad layer of II-IV Group semiconductor. CONSTITUTION:Approx. 1mum of an ZnSe2 which is supplied to a clad layer by a molecular beam epitaxial growth method of known technique is formed on a GaAs substrate 1, and an active layer In0.49(AlxGa1-x)0.51P layer 3 is formed in a thickness of approx. 0.1mum. The ZeSe is again formed in approx. 1mum to obtain a clad layer 4, and a p type GaAs film 5 of approx. 1mum is obtained by emitting Be molecular beam to a sample during growth of GaAs. An AuZn electrode 7 and an AuSn electrode 8 are formed through an SiO2 6 which has a striped hole at the thus provided wafer, thereby obtaining a semiconductor laser. |
| 公开日期 | 1984-05-18 |
| 申请日期 | 1982-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80680]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | NISHIDA KATSUHIKO. Semiconductor laser. JP1984086282A. 1984-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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