Semiconductor laser element
文献类型：专利
| 作者 | MATSUI KANEKI; MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI |
| 发表日期 | 1991-03-01 |
| 专利号 | JP1991048478A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent reliability from being reduced even under operation at high output by making the angle formed by both side surfaces of a groove within an upper layer of a laminated structure to be wider than that formed by both side surfaces of a groove within the lower part of the laminated structure. CONSTITUTION:A current construction layer 12 and an inverse dissolution layer 13 are accumulated on a p-GaAs substrate 11 by a first LPE growth method. Then, a groove 9 reaching the substrate 11 from the upper surface of the inverse dissolution layer 13 is formed. Then, a clad layer 14, an active layer 15, etc., are allowed to grow continuously on the groove 9 by the second LPE growth method. At this time, since A1 mixed crystal ratio of the inverse dissolution layer 13 is 0, the inverse dissolution layer 13 is inversely-dissolved during growth of the clad layer 14 and becomes thin. Especially, since the dissolution speed at a shoulder part 18 of the groove 9 is large, the shape of the shoulder part 18 becomes mild. Thus, an angle theta1 formed by both side surfaces of the groove 9 within the inverse dissolution layer becomes larger than an angle theta2 formed by both side surfaces of the groove 9 in the current constriction layer 12, thus preventing a large stress from being concentrated at the active layer 15 which is formed on the clad layer 14. |
| 公开日期 | 1991-03-01 |
| 申请日期 | 1989-07-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80683]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUI KANEKI,MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI. Semiconductor laser element. JP1991048478A. 1991-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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