Manufacture of semiconductor laser
文献类型：专利
| 作者 | IMANAKA KOUICHI; WATANABE AKIRA; MATOBA AKIHIRO; SANO KAZUYA |
| 发表日期 | 1984-11-29 |
| 专利号 | JP1984210682A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser, an end surface thereof does not deteriorate, by forming an active layer and an optical waveguide layer in the vicinity of the central section of a substrate and only an optical waveguide layer in the vicinity of the end surface of the substrate by one-time crystal growth. CONSTITUTION:An N type GaAs substrate 1 is mesa-etched. The substrate is etched so that the width of the top of a mesa section 2 is made thinner than a central section in the vicinity of an end section at that time. An N type clad layer 3, an active layer 4, a P type waveguide layer 5, a P type clad layer 6 and a P type cap layer 7 are grown continuously on the substrate Each layer 3-7 is formed severally in predetermined thickness in the vicinity of the center of the mesa section 2 through said continuous growth. On the other hand, the layer 4 hardly grows in the vicinity of the end surfaces of the mesa section 2. Consequently, a semiconductor laser, which executes only optical waveguide in the vicinity of the end surfaces and does not recombine and emit light, can be manufactured. Accordingly, the deterioration of the end surfaces of the semiconductor laser can be prevented. Such a semiconductor laser can be manufactured by one- time crystal growth and without damaging the end surfaces. |
| 公开日期 | 1984-11-29 |
| 申请日期 | 1983-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,WATANABE AKIRA,MATOBA AKIHIRO,et al. Manufacture of semiconductor laser. JP1984210682A. 1984-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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