Optical-electronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | HASUMI YUJI; TENMIYO JIRO; ASAHI HAJIME; KOUMAE ATSUO |
| 发表日期 | 1987-11-17 |
| 专利号 | JP1987264661A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical-electronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain optical-electronic IC of high performance by a method wherein an nnnn multilayer epitaxial film of AlX Ga1-xAs is provided with a composition ratio (x) varied on a semi-insulative GaAs substrate, further npnn multilayer epitaxial film of AlzGal-zAs is superposed thereon with a composition ratio (z) varied, and a p+ layer is provided selectively. CONSTITUTION:n-AlxGa1-xAs 2, n-CaAs 3 and n-A$1xGa1-xAs 4 are superposed on semi-insulative GaAs 1 to construct a horizontal fringe laser, and n+-GaAs 5 is superposed thereon. Moreover, n-GaAs 6, p-AlzGa1-zAs 7, n-AlzGa1-zAs 8 and n-GaAs 9 are superposed. A p layer 10 is diffused to prepare a hetero junction element of an n collector 5, a p base 10 and an n emitter 9. Next, a p ion implanted layer 11 extending from the n layer 5 to the substrate 1 is prepared, diffusion is conducted again to provide a p layer 12, electrodes P and N to form a laser diode, and H ions are implanted for element isolation 13 and 13 '. According to this construction, the concentration of a laser active layer and the concentration of a base layer of a transistor can be set separately, and the horizontal laser of a low threshold current and the trsnsiator of a cut-off frequency of 1 GHz or above are obtained on the same substrate. |
| 公开日期 | 1987-11-17 |
| 申请日期 | 1986-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | HASUMI YUJI,TENMIYO JIRO,ASAHI HAJIME,et al. Optical-electronic integrated circuit and manufacture thereof. JP1987264661A. 1987-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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