Semiconductor laser array
文献类型：专利
| 作者 | TOKUDA YASUKI; FUJIWARA KENZO; TSUKADA NORIAKI; KOJIMA KEISUKE; NOMURA YOSHITOKU; MATSUI TERUHITO |
| 发表日期 | 1988-02-12 |
| 专利号 | JP1988032981A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array |
| 英文摘要 | PURPOSE:To obtain multiple wavelengths, by integrating a plurality of semiconductor laser elements, which comprise quantum-well active layers having respective different inner losses, on one chip. CONSTITUTION:Stripe widths of optical waveguides 25a, 25b, and 25c in a quantum-well active layer 20 are formed to be, for example, 0.5mum, 2mum, and 5mum, respectively, so that internal loss of a resonator has variety. The smaller the stripe widths are formed, the higher the loss of the resonator becomes. These internal losses alpha25a, alpha25b, alpha25c have the following relation: alpha25a>alpha25b>alpha25c. When current is then injected into this semiconductor laser array, gain at the wavelength corresponding on the n=1 quantum level which is the lowest becomes larger than the loss (alpha25c) on the optical waveguide 25c, so that laser beams of wavelength lambda1 are oscillated. On the optical waveguide 25b, no oscilllation occurs on the n=1 level, the gain at the wavelength corresponding on the n=2 quantum level becomes larger than the loss (alpha25b), so that laser beams of wavelength lambda2 ( |
| 公开日期 | 1988-02-12 |
| 申请日期 | 1986-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80695]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TOKUDA YASUKI,FUJIWARA KENZO,TSUKADA NORIAKI,et al. Semiconductor laser array. JP1988032981A. 1988-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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