Manufacture of semiconductor laser
文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1987-05-25 |
| 专利号 | JP1987113489A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To equalize an etching rate approximately, and to prevent the breaking of a mesa section by forming a mask coating the peripheral section of a wafer onto the wafer with a multilayer semiconductor layer and shaping the striped mesa section through mesa-etching. CONSTITUTION:A striped mesa section 6 and a mask (such as a striped SiO2 film 5 and a peripheral SiO2 film 7) coating the peripheral section to a wafer are formed onto the wafer with a multilayer semiconductor layer to which the striped mesa section containing an active layer (such as an N or P-type InGaAsP active layer 2) must be shaped, and the striped mesa section 6 is formed through mesa-etching. Accordingly, the supply of an etchant to the peripheral section of the wafer is inhibited, the difference of etching rates is reduced, and uniform mesa structure can be shaped in the whole sections, thus minimizing possibility in which the breaking, etc. of the mesa section are generated. |
| 公开日期 | 1987-05-25 |
| 申请日期 | 1985-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80703]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Manufacture of semiconductor laser. JP1987113489A. 1987-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。