Semiconductor laser device
文献类型：专利
| 作者 | HIRONAKA, MISAO |
| 发表日期 | 1996-10-22 |
| 专利号 | US5568502 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes resonator facets formed by cleaving; a first conductivity type semiconductor region; a semiconductor multilayer structure disposed on the first conductivity type semiconductor region and including at least an active layer and upper and lower cladding layers sandwiching the active layer, the semiconductor multilayer structure functioning as a laser; first and second electrodes for supplying current to the semiconductor multilayer structure to generate light in that structure; a second conductivity type semiconductor region disposed in the vicinity of the semiconductor multilayer structure so that the light generated in the semiconductor multilayer structure is directly applied to the second conductivity type region, the second conductivity type region contacting the first conductivity type semiconductor region to produce a pn junction; and a third electrode electrically contacting the second conductivity type region for outputting signals when a voltage is applied across the third electrode and one of the first and second electrodes. Since the light-responsive region, i.e., the pn junction, is included in the laser device, an external photodetector is dispensed with, so the cost of the laser device is significantly reduced. |
| 公开日期 | 1996-10-22 |
| 申请日期 | 1995-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80705]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HIRONAKA, MISAO. Semiconductor laser device. US5568502. 1996-10-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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