Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; WATANABE AKIRA; KAWAI YOSHIO; IMANAKA KOUICHI |
| 发表日期 | 1985-08-01 |
| 专利号 | JP1985145688A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the titled device which can act with high efficiency and with high output by simplifying the process by a method wherein an internal current stricture layer having ridges is formed by the combination of two times of epitaxial growing process and photolithograpy process. CONSTITUTION:An N-GaAs layer 2 serving as the current stricture layer is formed on one substrate surface 1a of a P-GaAs substrate The substrate 1 is exposed by boring a stripeform hole 3 at the center of the GaAs layer 2. Then, a GaAs layer 4 of double-stage structure having a stepwise difference consisting of two stripeform ridges 4a of reverse mesa shape and a thinner flat part 4b is formed by etching so at to leave thickly the part of the side of the hole 3, and to make the outside part thin. Semiconductor layers such as a P-AlxGa1-xAs layer, the lower side clad layer 5, a P-AlyGa1-yAs layer, an active layer 6, an N- AlzG1-zAs layer, the upper side clad layer 7, and an N-GaAs layer, a contact layer 8 are successively grown on this GaAs layer 4 and the exposed surface 1b. An N-side electrode 9 is adhered on the contact layer 8, and a P-side electrode 10 on the other substrate surface 1c of the substrate 1, resulting in the completion of the semicoductor laser. |
| 公开日期 | 1985-08-01 |
| 申请日期 | 1984-01-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80713]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,WATANABE AKIRA,KAWAI YOSHIO,et al. Manufacture of semiconductor laser. JP1985145688A. 1985-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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