Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA, TAKASHI; NAKATUKA, SHINICHI; CHINONE, NAOKI; NAKAMURA, MICHIHARU; ONO, YUICHI |
| 发表日期 | 1988-04-26 |
| 专利号 | US4740976 |
| 著作权人 | OPNEXT JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method. |
| 公开日期 | 1988-04-26 |
| 申请日期 | 1984-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80719]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPNEXT JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | KAJIMURA, TAKASHI,NAKATUKA, SHINICHI,CHINONE, NAOKI,et al. Semiconductor laser device. US4740976. 1988-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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