Semiconductor laser and its manufacture
文献类型：专利
| 作者 | ITAYA KAZUHIKO; ISHIKAWA MASAYUKI; OKAJIMA MASASUE; HATAGOSHI GENICHI |
| 发表日期 | 1992-01-20 |
| 专利号 | JP1992014277A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To eliminate laser light absorption near the emitting end face of an active layer by making the band gap energy of the light emitting end face section larger than the principal light emitting section of the active layer so as to avoid the light absorption at the light emitting end face of the active layer. CONSTITUTION:A p-In0.5Ga0.5P cap layer 17 is formed on the clad layer 16 of a double heterostructure section. The ratio of the In, Ga, and Al is decided so that the lattice constants of each layer of the double heterojunction and the cap layer 17 can become the same as the lattice constant of a GaAs substrate and, at the same time, the band gap energy of clad layers 12 and 14 can become larger than that of an active layer 13. The oscillating wavelength is decided by the band gap energy of the active layer 13 into which current injection is mainly performed. The absorption coefficient of a high-energy gap 13b to the wavelength is smaller than the low-energy gap area 13a and, accordingly, the deterioration mode by self-absorption near the light emitting end face of the active layer can be suppressed. |
| 公开日期 | 1992-01-20 |
| 申请日期 | 1990-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80723]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | ITAYA KAZUHIKO,ISHIKAWA MASAYUKI,OKAJIMA MASASUE,et al. Semiconductor laser and its manufacture. JP1992014277A. 1992-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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