Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | KUMABE HISAO |
| 发表日期 | 1988-03-18 |
| 专利号 | JP1988062292A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce a threshold current and to be able to operate a semiconductor laser at high output by providing a lower clad layer bent along a groove, an upper clad layer having smaller forbidden band width at the center than the lower clad layer and larger forbidden band width than the center of the active layer, a current block layer, and a contact layer on a semiconductor substrate crystal. CONSTITUTION:A stripelike groove 10 is formed on a substrate crystal 1, and a lower clad layer 2, an active layer 3, an upper clad layer 4 and a current block layer 5 are then continuously grown. The layers are all bent along the groove 10. Then, a rectangular groove 11 is formed in depth which arrives at the layer 4 on the layer 5. Thereafter, a contact layer 6 is formed. Simulatneously, with the layer 5 as a mask the groove 11 is passed only through the center to form a diffused region 7. A diffused region 7 deep at the center is formed by the facts that the diffusing velocity of the layer 4 is faster than the layer 5 and the groove 11 is opened only at the center. |
| 公开日期 | 1988-03-18 |
| 申请日期 | 1986-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80728]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUMABE HISAO. Semiconductor laser device and manufacture thereof. JP1988062292A. 1988-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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