Semiconductor laser device
文献类型：专利
| 作者 | SATOU NOBU; MORI MITSUHIRO; KOBAYASHI MASAYOSHI; KATOU HIROSHI; KOBAYASHI MASAMICHI; HANEDA MAKOTO |
| 发表日期 | 1983-05-31 |
| 专利号 | JP1983091692A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce strain, to improve reliability and to lengthen life by using Mo or W, a thermal expansion coefficient thereof is close to that of GaAs and thermal conductivity thereof is large, as a sub-mount. CONSTITUTION:The sub-mount is formed in such a manner that Cr 6, Au 7 and Pb-Sn 8 are coated onto Mo 5 with 0X0mm. size and 0.2mm. thickness as electrodes in the thickness of 0.05mum, 0.06mum and 3.0mum respectively in one surface and Ni 9 and Au 10 in the thickness of 0.4mum and 0.36mum respectively through an evaporation method at the reverse side. A double-hetero type visual semiconductor laser chip 1, which has an active layer 2, which consists of GaAl As and has 0.15mum thickness, 2mum width and 300mum cavity length, and is die-bonded while an N side electrode 3 is positioned to an upper section and a P side electrode 4 to a lower section, is previously positioned onto the sub-mount, heated under a state that 10g load is applied to the chip 1, slowly cooled and die-bonded by Pb-Sn solder. |
| 公开日期 | 1983-05-31 |
| 申请日期 | 1981-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80729]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SATOU NOBU,MORI MITSUHIRO,KOBAYASHI MASAYOSHI,et al. Semiconductor laser device. JP1983091692A. 1983-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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