Manufacture of semiconductor laser device
文献类型：专利
| 作者 | TAKIGAWA SHINICHI; ITO KUNIO |
| 发表日期 | 1989-04-11 |
| 专利号 | JP1989091486A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a DFB laser device having high reliability, by depositing a first clad layer, an active layer, a guide layer and a grating layer sequentially in that order through the LPE process, forming diffraction grating on the grating layer and then depositing a second clad layer through the MOCVD process. CONSTITUTION:A current blocking layer 2 is deposited on a substrate 1 by crystal growth through the liquid-phase epitaxy(LPE) process, and then two ridges are formed therein. The LPE process is again performed so that a clad layer 3, an active layer 4, a guide layer 5 and a grating layer 6 are deposited sequentially in that order. After secondary diffraction grating pattern is formed with photoresist, grating is produced. A clad layer 7 and a contact layer 8 are deposited by crystal growth through the metal-organic chemical vapor deposition(MOCVD) process, and an element is completed. In this manner, a distribution feed-back laser(DFB laser) device having high reliability can be obtained. |
| 公开日期 | 1989-04-11 |
| 申请日期 | 1987-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKIGAWA SHINICHI,ITO KUNIO. Manufacture of semiconductor laser device. JP1989091486A. 1989-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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