Semiconductor laser device
文献类型:专利
作者 | KATO TAKESHI; CHIBA KATSUAKI; MIZUISHI KENICHI |
发表日期 | 1990-09-13 |
专利号 | JP1990230783A |
著作权人 | HITACHI LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To prevent crosstalk between photo detectors by a method wherein two beams outputted from a pair of lasers are introduced into different photo detectors through different optical waveguides, and independently detected. CONSTITUTION:A mount 5 side (laser 1 side) and a mount 6 side (laser 2 side) face each other so as to constitute a pair. The beam of the laser 1 is outputted from an active layer 3 upward and downward. The beam outputted downward enters an optical waveguide 9 from a surface 32, reflected by an obliquely processed surface 33, and enters the light receiving surface 35 of a photo detector 1 The beam of the laser 2 is similarly detected by the other photo detector. In this manner, two beams outputted from a pair of semiconductor laser chips are introduced by different optical waveguides respectively and detected by a pair of photo detectors. |
公开日期 | 1990-09-13 |
申请日期 | 1989-03-03 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/80739] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | KATO TAKESHI,CHIBA KATSUAKI,MIZUISHI KENICHI. Semiconductor laser device. JP1990230783A. 1990-09-13. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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