中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者KATO TAKESHI; CHIBA KATSUAKI; MIZUISHI KENICHI
发表日期1990-09-13
专利号JP1990230783A
著作权人HITACHI LTD
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To prevent crosstalk between photo detectors by a method wherein two beams outputted from a pair of lasers are introduced into different photo detectors through different optical waveguides, and independently detected. CONSTITUTION:A mount 5 side (laser 1 side) and a mount 6 side (laser 2 side) face each other so as to constitute a pair. The beam of the laser 1 is outputted from an active layer 3 upward and downward. The beam outputted downward enters an optical waveguide 9 from a surface 32, reflected by an obliquely processed surface 33, and enters the light receiving surface 35 of a photo detector 1 The beam of the laser 2 is similarly detected by the other photo detector. In this manner, two beams outputted from a pair of semiconductor laser chips are introduced by different optical waveguides respectively and detected by a pair of photo detectors.
公开日期1990-09-13
申请日期1989-03-03
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/80739]  
专题半导体激光器专利数据库
作者单位HITACHI LTD
推荐引用方式
GB/T 7714
KATO TAKESHI,CHIBA KATSUAKI,MIZUISHI KENICHI. Semiconductor laser device. JP1990230783A. 1990-09-13.

入库方式: OAI收割

来源:西安光学精密机械研究所

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