Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | YAMAGOSHI SHIGENOBU; WAKAO KIYOHIDE |
| 发表日期 | 1989-04-24 |
| 专利号 | JP1989106489A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a semiconductor device with multi-dimensional quantum well to be easily formed by allowing a quantum well configuration material thin film with dimensions which can be quantized in thickness direction at the bottom of V groove only and in horizontal direction which crosses the V groove to grow. CONSTITUTION:A photo-resist film is formed on an n-type InP substrate whose profile index is 100 and exposure and development are performed to it to produce a mask for forming V groove which extends in direction by applying, for example, the two flux of light interference method. Etching of a substrate 1 is performed and a corrugation 2 is formed. Thus, the 111A surface is exposed on the inner surface of the corrugation 2 and an extremely sharp V groove can be obtained. When a heat treatment is performed within a heat treatment device, an InGaAsP active layer 4 is formed at the bottom of the corrugation 2 by the mass-transport phenomenon. Then, when the heat treatment is performed by covering the corrugation 2 of a substrate 1 with an InP plate 5 after removing a GaAs plate 3, an n-type InP embedding layer 6 is formed on an active layer 4 similarly by the mass-transport phenomenon. In this case, the top part of the corrugation 2 consisting of InP changes into a round shape. |
| 公开日期 | 1989-04-24 |
| 申请日期 | 1987-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80745]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGOSHI SHIGENOBU,WAKAO KIYOHIDE. Semiconductor device and manufacture thereof. JP1989106489A. 1989-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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