Semiconductor light emitting device
文献类型：专利
| 作者 | IMAI HAJIME; HORI KENICHI |
| 发表日期 | 1983-03-22 |
| 专利号 | JP1983048488A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve a yield rate in chip bonding and to make it possible to provide two dimensional array of chips, by forming a concave part in a substrate, forming an active layer and a clad layer in the concave part, forming a current blocking region in the region outside the external part of the side of the concave part so as to prevent current flow, thereby suppressing the spread of the current to the outside of the side surface of the concave part and taking out the light in the directon perpendicular to the chip surface. CONSTITUTION:A layer 2 is grown on a substrate 1 in a liquid phase. Then the concave part 3 is formed and the clad layer 4 and the active layer 5 are grown in a liquid phase. Then an N electrode 9 and a P electrode 10 are formed on the surface of the substrate 1, on which the layer 5 and the clad layer 8 are formed, and the surface of the clad layer 8, respectively. Then a light extracting windown 11 is provided. In this constitution, since the light in the direction perpendicular to a semiconductor chip can be taken out, the degradation of the yield rate of bonding due to the attachment or bump of a fused bonding material to the side of the chip in the bonding is alleviated, and the wiring can be readily performed even though the chips are arranged in the two dimensional array. |
| 公开日期 | 1983-03-22 |
| 申请日期 | 1981-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80753]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME,HORI KENICHI. Semiconductor light emitting device. JP1983048488A. 1983-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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