Semiconductor laser
文献类型：专利
| 作者 | HOTTA HITOSHI |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010685A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form an AlGaInP-based semiconductor laser device whose transversal mode control is stable by a method wherein a p-type As layer is provided between the mesa stripe structure of a p-type AlGaInP clad layer and an n-type GaAs layer on both sides of its mesa stripe. CONSTITUTION:An n-type (Al0.6Ga0.4)0.5In0.5P clad layer 2, a Ga0.5In0.5P/(Al0.6 Ga0.4)0.5In0.5P superlattice active layer 3, a p-type (Al0.6Ga0.4)0.5In0.5P clad layer 4, a p-type Ga0.5In0.5P layer 5 and a p-type GaAs cap layer 6 are formed sequentially on an n-type GaAs substrate A stripe-shaped SiO2 mask 9 having a width of 5mum is formed on a wafer; the p-type (Al0.5Ga0.4)0.5In0.5P clad layer 4 is etched down to a halfway part so as to be a mesa shape by using the SiO2 mask 9. After that, a p-type GaAs layer 8 and an n-type GaAs layer 11 are formed selectively on both sides of a mesa stripe. The SiO2 mask 9 is removed; after that, a p-type GaAs contact layer 7 is formed. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | HOTTA HITOSHI. Semiconductor laser. JP1992010685A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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