Semiconductor laser
文献类型：专利
| 作者 | KONNO NOBUAKI; MIZUGUCHI KAZUO |
| 发表日期 | 1990-10-05 |
| 专利号 | JP1990249289A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having a good p-n junction in a current blocking region without a regrowth interface in a current blocking layer region by forming the current blocking layer and upper and lower layers of the opposite couductivity type thereto in one growth process. CONSTITUTION:An n-AlGaAs lower clad layer 2, an AlGaAs active layer 3, and a p-AlGaAs upper clad layer 4, an n-GaAs current blocking layer 5, and a p-GaAs layer 6, the forbidden band of said active layer 3 being narrower than those of said lower and upper clad layers 2 and 4, are formed on an n- GaAs substrate 1 in first crystal growth and part of the current blocking layer 5 and the p-GaAs layer 6 is removed by photoengraving and etching to form a stripe-shaped groove. A p-AlGaAs buried layer 7 and a p-GaAs contact layer 8 are formed to fill the groove in second crystal growth. |
| 公开日期 | 1990-10-05 |
| 申请日期 | 1989-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80764]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONNO NOBUAKI,MIZUGUCHI KAZUO. Semiconductor laser. JP1990249289A. 1990-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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