Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | MIYAZAWA SEIICHI |
| 发表日期 | 1991-12-27 |
| 专利号 | JP1991297185A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent mutual diffusion and inhibit the generation of strain by producing a semiconductor device which contains AlGaAs having an Al content of 0.35 and over in a laminated layer of GaAs, and Si and the like on a substrate side from an active region at a substrate temperature of 500 deg.C and below. CONSTITUTION:On an n-GaAs substrate are laminated a 0.5mum thick Si additive GaAs 2, 5mum Si additive Aly-xAs 3 so as to select X>0.35 and over. Then, an additive-free AlyGa1-yAs optical enclosed layer 4 of 2000Angstrom is laminated thereon where y is gradually reduced down to 0.3. Then, a GaAs active layer 5 of 70Angstrom is installed and an additive-free AlzGa1-zAs optical enclosed layer 6 is laminated thereon where z is gradually increased in symmetric with the layer 4 and a 0.5mum thick Be additive AlxGa1-xAs 7, and a 0.5mum thick Be additive GaAs 8 are laminated. Then, the thickness of the substrate 1 is reduced to about 100mum where an electrode of AuGe/Ni/Au 10, and Cr/Au 9. The presence of AlGaAs 3 having Al content of 0.35 and over under the active layer 5 in between provides a semiconductor device which with-stands practical service at a temperature of 500 deg.C and below where no standard device is applicable. |
| 公开日期 | 1991-12-27 |
| 申请日期 | 1990-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | MIYAZAWA SEIICHI. Semiconductor device and manufacture thereof. JP1991297185A. 1991-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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