Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | NOGUCHI ETSUO; SUZUKI YOSHIO; NAGAI HARUO |
| 发表日期 | 1985-12-12 |
| 专利号 | JP1985251689A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain not only oscillation at a fundamental transverse mode but also oscillation at a low threshold by positioning an N type InP layer in a multilayer structure crystal constituting a buried layer consisting of InP or InGaAsP having the functions of the constriction of currents and the formation of an optical waveguide at a section lower than the end section of an active layer in mesa structure and the P- N junction section of InP. CONSTITUTION:An SiO2 film is formed onto the whole surface of a clad layer 4, and a mask 10 composed of SiO2 is shaped to a striped form. A hetero-growth section under the SiO2 mask 10 is left to an inverted mesa shape to form mesa structure. An active layer 3 is side-etched selectively. Second buried growth is conducted, and an N type semiconductor layer 5 and a P type semiconductor layer 6 are grown in succession. A P type InP buffer layer 2a and an N type InP clad layer 4 generates a mast lance port through heat treatment at that time at a position isolated by a groove 11 removed through the side etching of the active layer 3, and upper and lower InP layers are connected rapidly through a P-N junction surface 12. Regarding second buried growth, a buried layer is grown to a mesa-etched section by utilizing properties of which a crystal does not grow on SiO2 in liquid-phase epitaxial growth. The N type InP layer in 5 is controlled so as to be positioned on the side lower than 12 at that time, and the P type InP layer in 6 is grown. |
| 公开日期 | 1985-12-12 |
| 申请日期 | 1984-05-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80782]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,SUZUKI YOSHIO,NAGAI HARUO. Semiconductor laser element and manufacture thereof. JP1985251689A. 1985-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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