Semiconductor light emitting device
文献类型：专利
| 作者 | UCHIDA, SHIRO |
| 发表日期 | 2002-12-10 |
| 专利号 | US6492660 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device includes a cladding layer having a first conductive type, an active layer, and a semiconductor layer including at least a cladding layer and having a second conductive type reversed to the first conductive type, which layers are sequentially stacked on a substrate; wherein a ridge is formed on part of an upper portion of the semiconductor layer; each of the cladding layer having the first conductive type, the active layer, and the semiconductor layer having the second conductive type is made from a nitride based group III-V compound semiconductor; and the width of the ridge is in a range of 9 to 2.6 mum. The semiconductor light emitting device is stably operable with an output of about 30 mW by setting a threshold current to 100 mA or less and also setting a horizontal angle to 6° or more. |
| 公开日期 | 2002-12-10 |
| 申请日期 | 2001-01-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80784]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | UCHIDA, SHIRO. Semiconductor light emitting device. US6492660. 2002-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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