半導体レーザの製造方法
文献类型：专利
| 作者 | 岡村 茂; 田口 孝雄; 和田 修 |
| 发表日期 | 1994-10-12 |
| 专利号 | JP1994080858B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To form a vertical and smooth laser resonator surface easily by shap ing an end surface through chemical etching first, irradiating the end surface by focused ion beams and finishing the end surface when the end surface of a Fabry-Perot type resonator is shaped. CONSTITUTION:A striped section 2 is formed to a wafer 1, into which a semiconductor laser, etc. consisting of an AlGaAs/GaAs group, etc. are manufactured, by using a photo-resist mask film 4 through a photo-lithography and chemical etching. Since sags are generated in the end surfaces 3 of the shaped striped section 2, the vertical and smooth end surfaces 3 are formed through the projection of Ga ion beams 5 as focused ion beams. Both end surfaces 3 are processed completely by ion beams 5, and damages due to processing are removed perfectly through heat treatment for approximately ten min at 500 deg.C. Accordingly, an excellent semiconductor laser, approximately 20mA oscillation threshold currents therefor may be used, is otained with superior reproducibility without depending upon a cleavage method. |
| 公开日期 | 1994-10-12 |
| 申请日期 | 1984-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80791]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | 岡村 茂,田口 孝雄,和田 修. 半導体レーザの製造方法. JP1994080858B2. 1994-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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