Semiconductor laser
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989293688A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a defect of growth of a clad layer and to enhance an electrical characteristic by a method wherein a semiconductor layer where a diffraction grating is formed is to be of a multiple quantum well structure. CONSTITUTION:AlGaAs and GaAs are grown alternately on a substrate 1; a first clad layer 2a is formed; after that, a diffraction grating at a prescribed interval is produced in the layer 2. Then, a second clad layer 3 is crystal-grown on the produced diffraction grating; in addition, an active layer 4 and a third clad layer 5 are grown one after another. Then, electrodes 7, 8 are formed; an element is completed. The first clad layer 2a is not composed of only AlGaAs; GaAs which is hard to oxidize is laminated in every other layer; accordingly, the second clad layer 3 is grown normally at least on GaAs; a defect of growth is hard to cause; also the electrical conduction becomes good. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80805]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Semiconductor laser. JP1989293688A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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