Semiconductor laser device
文献类型：专利
| 作者 | IKETA KAZUHIRO; YAMAMOTO YOSHIHISA; MACHIDA SUSUMU |
| 发表日期 | 1989-12-01 |
| 专利号 | JP1989298787A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress spontaneous emission process so that the electrons injected at a threshold current of zero may all be converted into photons of laser beams by forming two reflection mirrors at a distance below half the luminous wavelength, and arranging the distance between two reflection mirrors so that it may meet the lowest resonance condition to the luminous wavelength. CONSTITUTION:An active layer 1 to enclose electrons is made in the structure of quantum well fine line so as to make it interact only with one mode among two polarization modes crossing each other at right angles. That is, in the y- and z-axes directions, the electrons are shut in with the potential walls by clad layers 2 and 3 having band caps larger than the active layer 1, and only in this x-axis direction they are conveyed freely and injected through a p-n junction. Further dipole moment is formed only in the x-axis direction by the interaction with the electric field of the light. And to constitute a micro resonator below half the luminous wavelength, a substrate 4 is etched and the lower side of the p-n junction among the quantum well fine line 1 is thinned, and dielectric films 6 and 7, metal or dielectric multilayer film reflection mirrors 8 and 9 are deposited so as to make a microresonator. Hereby, as compared with usual semiconductor laser, the resonator length becomes smaller by about 10, and the electric field formed by one phonton becomes 10 times. |
| 公开日期 | 1989-12-01 |
| 申请日期 | 1988-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | IKETA KAZUHIRO,YAMAMOTO YOSHIHISA,MACHIDA SUSUMU. Semiconductor laser device. JP1989298787A. 1989-12-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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