Semiconductor laser element
文献类型：专利
| 作者 | MORI YOSHIHIRO; SHIBATA ATSUSHI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989143283A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce a threshold value current, improve luminous efficiency, further make low chirping and high speed modulation possible by reducing a current not contributing to luminance in a semiconductor laser element having a quantum fine line. CONSTITUTION:An n-type Al1-xGax clad layer 102, an active layer 103, a p-type Al1-xGaxAs clad layer 104 and a p-type GaAs cap layer 105 are formed by turns on an n-type GaAs substrate 10 The active layer 103 consists of four kinds of layers, that is, a quantum fine line 201 made of GaAs, a Cr-doped Al1-zGazAs high resistance layer 202 filling the interval between the neighboring quantum fine lines 201 and an n-type Al1-yGayAs layer 203 made by holding these layers in between and a p-type Al1-yGayAs core layer 204. By such constitution, an injected current can not pass through the high resistance layer 202 so that almost of it comes to pass through the quantum fine line 201 so as to be efficienly caught. |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MORI YOSHIHIRO,SHIBATA ATSUSHI. Semiconductor laser element. JP1989143283A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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