Semiconductor laser device
文献类型：专利
| 作者 | KADOWAKI TOMOKO |
| 发表日期 | 1992-08-11 |
| 专利号 | JP1992219989A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enhance the yield of the title device by a method wherein n-GaInP is adopted as a current-blocking layer, the n-GaInP current-blocking layer is grown on the whole surface so as to cover a ridge and a Zn diffusion region is formed so as to reach the ridge. CONSTITUTION:An n-AlGaInP lower clad layer 2, an undoped GaInP active layer 3, a p-AlGaInP upper clad layer 4 and a p-GaAs cap layer 5 are grown sequentially on an n-GaAs substrate; after that, a mask 14 is formed on the cap layer. Then, the cap layer 5 and the upperclad layer 4 are etched partly by using the mask 14; a ridge 10 is formed; the mask 14 is removed; after that, an n-GaInP current-blocking layer 6 is grown on the whole surface. Then, a mask 15 is formed; Zn is diffused from an opening part 16; a Zn diffusion region 7 is formed. Then, the mask 15 is removed; after that, a p-side electrode 8 and an n-side electrode 9 are vapor-deposited. Thereby, it is possible to enhance the characteristic of the title device. |
| 公开日期 | 1992-08-11 |
| 申请日期 | 1990-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KADOWAKI TOMOKO. Semiconductor laser device. JP1992219989A. 1992-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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