Semiconductor laser device
文献类型：专利
| 作者 | TODOROKI SATORU; UCHIDA HISATOSHI |
| 发表日期 | 1983-09-29 |
| 专利号 | JP1983164283A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which has long lifetime and high reliability by splitting an ohmic contact layer into two, to which the carrier of the device is injected, and preventing the distribution of the injected carrier from passing through the center of the striped groove of the substrate. CONSTITUTION:A resist mask is formed on the (100) surface of an N type GaAs substrate 1, and striped groove 2 is formed in (110) axial direction. An N type Ga1-xAlxAs 3, an N or P type Ga1-yAlyAs active layer 4, a P type Ga1-xAlxAs 5 and an N type Ga1-xAlxAs cap 6 are sequentially epitaxially grown. Then, two ohmic connecting layers 7 are formed by diffusion of Zn in depth partly reaching the clad layer 5 through the layer 6 opposite to the groove 2 while maintaining the interval so as for the distribution of the injected carrier not to pass the center of the groove. Electrodes 8a, 8b of Au series are attached to the layers 6, 7 and the back surface of the substrate. According to this configuration, since the injected carrier excitation and growing phenomenon is produced by avoiding the center of the groove which can feasibly dislocate or produce internal stress, the laser output can be maintained for a long period, thereby providing high reliability. |
| 公开日期 | 1983-09-29 |
| 申请日期 | 1982-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU,UCHIDA HISATOSHI. Semiconductor laser device. JP1983164283A. 1983-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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