Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; TAJIRI FUMIKO; KUME MASAHIRO; HIRAYAMA FUKUICHI; HAMADA TAKESHI |
| 发表日期 | 1986-03-14 |
| 专利号 | JP1986051984A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the titled device of single lateral mode oscillation, low threshold current value action, and low noise characteristic by a method wherein a multilayer film having the double-hetero structure cntaining an active layer is formed on a conductive substrate including two ridges adjacent to a groove of specific shape and dimensiona which cuts the P/N junction. CONSTITUTION:The groove 10 which cuts the P/N junction between two ridges 8 and 9 is provided between the two adjacent ridges of conductive substrates 1 and 2 having the P/N junction so as to be deep at the center, gradually shallower right and left, and 4.5-6.0mum in its width (d) in the substrate surface; besides, multilayer thin films 3-6 having the double-hetero structure containing the active layer 4 are formed on the conductive substrates including the two ridges 8 and 9 adjacent to the groove 10. For example, the ridge 8 is provided on the P type GaAs substrate 1 in stripe form by chemical etching, and an N type GaAs layer 2 is grown thereon by the method of liquid phase epitaxial growth; then, the ridge 9 and the groove 10 are formed thereto. Thereafterm a P type Ga1-x AlxAs clad layer 3, the GBa1-yAlyAs active layer 4, an N type GA1-xAlxAs clad layer 5, and an N type GaAs cap layer 6 are successively grown. |
| 公开日期 | 1986-03-14 |
| 申请日期 | 1984-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,TAJIRI FUMIKO,KUME MASAHIRO,et al. Semiconductor laser device. JP1986051984A. 1986-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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