Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI |
| 发表日期 | 1991-09-24 |
| 专利号 | JP1991217067A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable quantity of light entering a monitor PD to be constant and controllability of laser light to be enhanced by forming a PbSn solder to be formed on a surface where a LD chip of a submount is bonded smaller than the area of the LD chip and by allowing a surface without solder to be coated with a metal whose surface state is stable such as gold. CONSTITUTION:In a semiconductor laser device where an LD chip 1 is assembled into a cooling block through a submount 2 as a heat stress relaxing material, a PbSn solder 10 is formed on a surface where the LD chip 1 of the submount 2 is bonded smaller than the area of the LD chip 1 and the surface of the submount 2 without the PbSn solder 10 is coated with a metal 11 whose surface state is stable such as gold, thus enabling light applied from the rear surface of the LD chip 1 to be reflected from a metal 11 whose surface state is stable such as gold and a certain amount of light to enter a monitor PD stably for improving controllability of light applied from laser. |
| 公开日期 | 1991-09-24 |
| 申请日期 | 1990-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1991217067A. 1991-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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