Semiconductor laser device
文献类型：专利
| 作者 | OKADA MASATO; HATTORI AKIRA |
| 发表日期 | 1989-05-26 |
| 专利号 | JP1989135089A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve crystallinity of DH structure, to stabilize the thickness of a film, and to obtain a semiconductor laser having high reliability with good reproducibility by employing Sn as the dopant of an N-type current block layer, and so growing the block layer that the carrier concentration of the block layer falls within a specific range. CONSTITUTION:An internal stripe 3 having an N-type GaAs current block layer 2 formed by a liquid growing method with Sn as an N-type dopant and so etched as to arrive at a P-type GaAs substrate is formed on a P-type GaAs substrate A semiconductor laser having a P-type AlGaAs clad layer 4, a P-type AlGaAs active layer 5, an N-type AlGaAs clad layer 6, an N-type GaAs contact layer 7 formed by liquid growth on the stripe is provided. |
| 公开日期 | 1989-05-26 |
| 申请日期 | 1987-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80859]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKADA MASATO,HATTORI AKIRA. Semiconductor laser device. JP1989135089A. 1989-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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