Semiconductor light emitting device
文献类型：专利
| 作者 | FURUMIYA SATOSHI |
| 发表日期 | 1984-06-29 |
| 专利号 | JP1984112674A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enhance the current limiting effect in a light emitting device having a double hetero structure by limiting an active layer by a narrow striped region of a width along an optical axis, increasing the thickness of the section perpendicular to the optical axis of the active layer at the center larger than those of the left and right parts, and approaching the regions between which the striped region is interposed to the active layer to provide a thin insulator layer. CONSTITUTION:An N type InP lower clad layer 12 and a P type InP layer 13 are laminated and epitaxially grown in liquid phase on an N type InP substrate 11, and an SiO2 layer 21 having current limiting function is covered thereon. Then, a hole 21' is opened at the center and a V-shaped groove 22 which is intruded into the layer 12 is formed by etching, an N type InP layer 14 is grown on the overall surface while the film 21 remains, and a lower clad layer 14' is formed in the groove 22. Subsequently, an N type InGaAsP layer 15 is grown on the overall surface, an active layer 15' is formed on the layer 14', and the entire surface is covered with a P type InP upper clad layer 16 and a P type InGaAsP contacting layer 17. In this manner, the active layer 15' is formed in a delta shape having a thick center. |
| 公开日期 | 1984-06-29 |
| 申请日期 | 1982-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80861]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI. Semiconductor light emitting device. JP1984112674A. 1984-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。