半導体レ-ザ
文献类型：专利
| 作者 | 岩野 英明 |
| 发表日期 | 1996-05-31 |
| 专利号 | JP2525618B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser wherein the leakage of a current to regions other than an oscillation region is completely interrupted and moreover, an oscillation in a fundamental transverse mode can be controlled by using an effective optical confinement effect, and which has a low Ith, a long life and a high reliability, by a method wherein a layer obtained by laminating II-VI compound semiconductor layers, whose compositions are different from each other, a plurality of times alternately in order is provided in II-VI compound layers. CONSTITUTION:A rib, which is removed by etching to the depth in the middle of a clad layer 106 just over an active layer 105, of a double hetero junction semiconductor laser, which is constituted of the layer 105 consisting of a III-V compound semiconductor, a clad layer 104 and the clad layer 106, is formed and both ends of the rib are filled with a semiconductor layer 109 consisting of II-VI compound semiconductor layers and a semiconductor layer 110. In the semiconductor laser, the layer 109 obtainable by laminating II-VI compound semiconductor layers 107 and 108, whose compositions are different from each other, alternately in order a plurality of times is contained at least in a part of layer plane of the above layers 109 and 110. For example, both ends of the above rib are filled with the superlattice thin film 109, which is formed by laminating alternately the ZnSxSe1-x layers 107 of a thickness of 50Angstrom and the ZnSySE1-y layers 108 of a thickness of 50Angstrom at 50 periods, and the ZnSe layer 110. |
| 公开日期 | 1996-08-21 |
| 申请日期 | 1987-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80863]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 岩野 英明. 半導体レ-ザ. JP2525618B2. 1996-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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