半導体レ-ザ
文献类型：专利
| 作者 | 大川 和宏; 三露 常男; 山崎 攻 |
| 发表日期 | 1995-03-29 |
| 专利号 | JP1995028097B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in a bluish green region by forming double- hetero structure consisting of an N-type ZnSe layer, to which fluorine, chlorine or bromine is added as an impurity, a ZnSTe layer and a P-type ZnSe layer to which nitrogen, phosphorus or arsenic is added as an impurity. CONSTITUTION:The crystal of ZnSe, etc., is grown onto the surface of a clean GaAs substrate 1 through a molecular beam epitaxy method. An N-type ZnSe layer 2, to which chlorine Cl is added as an impurity and which has low resistance, is grown. In the growth of the ZnSe layer 2, the ZnSe layer 2 having low resistance and displaying an N type is acquired by simultaneously applying chlorine molecular ions during the irradiation of the molecular beams of Zn and Se. A ZnSTe layer 3 is grown. Lastly, the P-type ZnSe layer 3, to which nitrogen N is added as an impurity and which has low resistance, is grown. The ZnSe layer 3 having low resistance and displaying a P type is obtained by simultaneously[ly applying nitrogen molecular ions during the irradiation of the molecular beams of Zn and Se. Accordingly, the GaAs substrate 1, which has double-hetero structure composed of the N-type ZnSe layer 2 and the ZnSTe layer 3 acquired and a P-type ZnSe layer 4 and on which a thin-film is attached, is cloven, and an ohmic electrode is shaped, thus obtaining a semiconductor laser oscillating bluish green. |
| 公开日期 | 1995-03-29 |
| 申请日期 | 1987-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 大川 和宏,三露 常男,山崎 攻. 半導体レ-ザ. JP1995028097B2. 1995-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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