Optical bistable semiconductor laser
文献类型：专利
| 作者 | ODAKAWA TETSUSHI |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179480A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical bistable semiconductor laser |
| 英文摘要 | PURPOSE:To improve a laser of this design in operational speed so as to increase the amount of information processing by a method wherein an optical bistable semiconductor laser is constructed in such a manner that a light fall time of the laser is made to depend on a CR time constant of an annexed voltage control type light absorbing region. CONSTITUTION:An optical bistable semiconductor laser is composed of a gain region I, a saturable absorbing region II, and an added voltage control type light absorbing region III and provided with a semiconductor substrate 1 in common. The semiconductor laser composed of the gain region I and the saturable absorbing region II is a double heterojunction laser and composed of an active layer 3, a clad layer 4, and a cap layer 5 formed on the semiconductor substrate The voltage control type light absorbing region III is composed of a guide layer 11, a clad layer 12, a cap layer 13, and a third electrode 14 of a P-side electrode. When reset pulses are applied to the light absorbing region III, the band gap of the guide layer 11 is made to decrease due to a Franz-Geldish effect, and the light absorbing region III is made to promote a reset toward an OFF state as it is absorbing laser rays. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ODAKAWA TETSUSHI. Optical bistable semiconductor laser. JP1989179480A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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